Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma
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چکیده
منابع مشابه
Effect of N2O plasma treatment on the stabilization of water absorption in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition
The variation of residual stress with the water absorption was reduced drastically by the N2O plasma treatment for fluorinated silicon-oxide thin films. Fourier transformed infrared spectroscopy analysis showed that the film was oxidized by the plasma treatment. It was also determined that the oxidation occurred on the film surface from the P-etch rate and x-ray photoelectron spectroscopy analy...
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Bismuth titanate (Bi,Ti,O,, :BIT) thin films were prepared on the Pt courted MgO(100) substrate by electron cyclotron resonance plasma sputtering-chemical vapor deposition (ECR plasma sputtering-CVD). Bi20, was used as a sputtering target and tetra-isopropoxy-titanium [Ti(i-C3H70)4] as a CVD source. The composition of films was controlled by changing RF power (P,,) of Bi,O, target and Ti source...
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Amorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron resonance plasma technique, using N2 and SiH4 as precursor gases. The gas flow ratio, deposition temperature and microwave power have been varied in order to study their effect on the properties of the films, which were characterized by Rutherford back-scattering spectrometry, elastic recoil detection ana...
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متن کاملUltrathin Oxide on Polysilicon by ECR(Electron Cyclotron Resonance) N2O Plasma
We have developed a process of growing ultrathin oxide on polysilicon layer by using Electron Cyclotron Resonance (ECR) N2O plasma. Sub-4 nm thick polyoxide on n+ and p+ polysilicon layer were grown and characterized. The oxides have relatively large breakdown voltage, small electron trapping and QBD up to 7 C/ for polyoxide on p+ cm2 polysilicon and up to 5 C/ for polyoxide on n+ polysilicon u...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 2007
ISSN: 1071-1023
DOI: 10.1116/1.2746331